Reduction of graphene damages during the fabrication of InGaN/GaN light emitting diodes with graphene electrodes

Nanotechnology

Volumn 23, Issue 42, 2012, Pages

  Joo, Kisu ^a   Jerng, Sahng Kyoon ^b   Kim, Yong Seung ^b   Kim, Bumho ^a,c   Moon, Seunghyun ^a   Moon, Daeyoung ^c   Lee, Gun Do ^c   Song, Yoon Kyu ^a   Chun, Seung Hyun ^b   Yoon, Euijoon ^a,c  

^a Seoul National University   (South Korea)

^b Sejong University   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL FACTORS; DEVICE FABRICATIONS; ELECTRICAL AND OPTICAL PROPERTIES; ETCHING PROCESS; GAN BASED LED; INDIUM TIN OXIDE; INGAN/GAN; INJECTION CURRENTS; ITO FILMS; LED STRUCTURE; LIGHT OUTPUT; LUMINOUS EFFICIENCY; P-CONTACTS; TRANSPARENT CONDUCTING ELECTRODES;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; GALLIUM NITRIDE; GRAPHENE; GRAPHITE ELECTRODES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; RAMAN SPECTROSCOPY; TIN; TIN OXIDES;

LIGHT EMITTING DIODES;

EID: 84867239155     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/42/425302     Document Type: Article

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