Effect of deposition conditions on the characterization of Cu(In,Ga)Se2 precursor films by sputtering process

Applied Mechanics and Materials

Volumn 189, Issue , 2012, Pages 63-68

  Lin, Y C ^a   Ke, J H ^b   Chen, C C ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b Jenn Feng New Energy Co Ltd   (Taiwan)

Author keywords

Chalcopyrite; Precursor; Solar cell; Sputtering

Indexed keywords

AS-DEPOSITED FILMS; BI-LAYER; CHALCOPYRITE; CHALCOPYRITE STRUCTURES; COMPOSITION DISTRIBUTIONS; CU(IN , GA)SE; DEPOSITION CONDITIONS; PRECURSOR; PRECURSOR FILMS; QUATERNARY ALLOYS; SODA LIME GLASS; SPUTTERING POWER; SPUTTERING PROCESS; SUBSTRATE TEMPERATURE;

CHARACTERIZATION; COPPER COMPOUNDS; DEPOSITS; GALLIUM; MOLYBDENUM; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SPUTTERING; STOICHIOMETRY;

GALLIUM ALLOYS;

EID: 84867144885     PISSN: 16609336     EISSN: 16627482     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMM.189.63     Document Type: Conference Paper

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