Influence of annealing temperature on properties of Cu(In,Ga)(Se,S) 2 thin films prepared by co-sputtering from quaternary alloy and In2S3 targets

Physica B: Condensed Matter

Volumn 406, Issue 4, 2011, Pages 824-830

  Lin, Y C ^a   Yen, W T ^a   Chen, Y L ^a   Wang, L Q ^a   Jih, F W ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Chalcopyrite; Co sputtering; Cu(In,Ga)(Se,S)2; Quaternary target

Indexed keywords

ABSORBER LAYERS; ABSORPTION BAND; ANNEALING TEMPERATURES; CHALCOPYRITE; COSPUTTERING; CU(IN ,GA)(SE ,S)2; PENTANARY; POLYCRYSTALLINE; POST-ANNEALING TEMPERATURE; PREFERRED ORIENTATIONS; QUATERNARY ALLOYS; QUATERNARY TARGET; SODA LIME GLASS SUBSTRATE; SPECTRAL ANALYSIS; TETRAGONAL CHALCOPYRITE STRUCTURE; VIBRATION FREQUENCY;

ANNEALING; CARRIER CONCENTRATION; COPPER COMPOUNDS; ELECTRIC PROPERTIES; GALLIUM; OPTICAL PROPERTIES; SEMICONDUCTING SELENIUM COMPOUNDS; SPECTRUM ANALYSIS; SUBSTRATES; THIN FILMS;

OPTICAL FILMS;

EID: 78751647878     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.12.004     Document Type: Article

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