Integration of edge-emitting laser diodes with dielectric waveguides on silicon

IEEE Photonics Technology Letters

Volumn 24, Issue 20, 2012, Pages 1849-1851

  Famenini, Shaya ^a   Fonstad, Clifton G ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

Complementary metal oxide semiconductor (CMOS) compatible photonics; infrared laser diodes; integrated optoelectronics; photonic integrated circuits (PIC); photonics integration

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONTINUOUS WAVE LASING; COUPLING LOSS; EDGE EMITTING LASERS; INGAAS/INP; INTEGRATED LASER; INTEGRATED STRUCTURE; INTEGRATION PROCESS; OUTPUT POWER; PHOTONIC INTEGRATED CIRCUITS; ROOM TEMPERATURE; SI SUBSTRATES; SINGLE MODE EMISSION; SPECTRAL MEASUREMENT; THRESHOLD CURRENTS;

DIELECTRIC WAVEGUIDES; INFRARED LASERS; INTEGRATED OPTOELECTRONICS; INTEGRATION; SILICON OXIDES;

PULSED LASERS;

EID: 84867094461     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2211344     Document Type: Article

References (11)

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