Full recess integration of small diameter low threshold VCSELs within Si-CMOS ICs

Optics Express

Volumn 16, Issue 18, 2008, Pages 13955-13960

  Perkins, James M ^a   Simpkins, Travis L ^a   Warde, Cardinal ^a   Fonstad, Clifton G ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; PELLETIZING; SILICON WAFERS; SURFACE EMITTING LASERS; TIMING CIRCUITS; TRANSCEIVERS;

DIELECTRIC STACK; INDIVIDUAL DEVICES; INTEGRATED DEVICE; INTERCONNECT METALS; SILICON INTEGRATED CIRCUITS; THERMAL IMPEDANCE; THRESHOLD CURRENTS; WAFER-SCALE PROCESSING;

WSI CIRCUITS;

SILICON;

ARTICLE; CHEMISTRY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LASER; SEMICONDUCTOR; SYSTEM ANALYSIS;

ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LASERS; MINIATURIZATION; SEMICONDUCTORS; SILICON; SYSTEMS INTEGRATION;

EID: 51149115725     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.013955     Document Type: Article

References (16)

1. See for example: Heterogeneous Optoelectronic Integration, E. Towe, ed. (SPIE, Bellingham, WA, 2000).
2. S. Daryanani, H. Fathollahnejad, D. L. Mathine, R. Droopad, A. Kubes, and G. N.Maracas, "Integration of a Single Vertical-cavity Surface Emitting Laser onto a CMOS Inverter Chip," Electron. Lett. 31, 833-834 (1995).
3. J. K. Tu, J. J. Talghader, M. A. Hadley, and J. S. Smith, "Fluidic Self-assembly of InGaAs Vertical Cavity Surface Emitting Lasers onto Silicon," Electron. Lett. 31, 1448-1449 (1995).
4. 3 Heterogeneous Integration Technologies," Singapore-MIT Alliance Symposium, January 2003.
5. The VCSEL heterostructure was grown by LandMark Optoelectronics Corporation.
6. 2O (1:18:20 by volume). The same etchant was used to remove the GaAs substrate.
7. K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, B. E. Hammons, D. Mathes, and R. Hull, "Advances in selective wet oxidation of AlGaAs alloys," IEEE J. Sel. Top. Quantum Electron. 3, 916-927 (1997).
8. WaferBond™ is a product of Brewer Science Incorporated.
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10. MOSIS Integrated Circuit Fabrication Service, USC Information Sciences Institute.
11. J. M. Perkins, "Low Threshold Vertical Cavity Surface Emitting Lasers Integrated onto Si-CMOS ICs Using Novel Hybrid Assembly Techniques," Ph.D. Thesis, Department of Electrical Engineering and Computer Science, Massachusetts of Technology, Cambridge, MA, August 2007.
12. G. S. Matijasevic, C. Lee, and C. Y. Wang "Au-sn alloy phase diagram, and properties related to its use as a bonding medium," Thin Solid Films 223, 276-287 (1993).
13. M. S. Teo, "Development of Pick and Place Assembly Techniques for Monolithic Optopill Integration," MS. Thesis, Department of Electrical Engineering and Computer Science, Massachusetts of Technology, Cambridge, MA, January 2005.
14. The BCB used in this work was Cyclotene 3022-46 Resin produced by Dow Chemical Company.
15. J. M. Perkins and C. G. Fonstad, manuscript in preparation.
16. C. G. Fonstad, "Optical Solderb Bumps: A Modular Approach to Monolithic Optoelectonics Integration," International Semiconductor Device Research Symposium, (2001) 584-588.