W-band CMOS amplifiers achieving +10dBm saturated output power and 7.5dB NF

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2009, Pages 486-488

  Sandström, Dan ^a   Varonen, Mikko ^a   Kärkkäinen, Mikko ^a   Halonen, Kari ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70349272855     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2009.4977520     Document Type: Conference Paper

References (7)

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2. M. Varonen, M. Kärkkäinen, M. Kantanen, and K.A.I. Halonen, "Millimeter-Wave Integrated Circuits in 65nm CMOS," IEEE J. Solid-State Circuits, vol.43, no.9, pp.1991- 2002, Sept. 2008.
3. C.H. Doan, S. Emami, A.M. Niknejad, and R.W. Brodersen, "Millimeter-Wave CMOS Design," IEEE J. Solid-State Circuits, vol.40, no.1, pp. 144-155, Jan. 2005.
4. E. Laskin, M. Khanpour, R. Aroca, K.W. Tang, P. Garcia, and S.P. Voinigescu, "A 95GHz Receiver with Fundamental-Frequency VCO and Static Frequency Divider in 65nm Digital CMOS," ISSCC Dig. Tech. Papers, pp.180-605, 3-7 Feb. 2008.
5. Y.-S. Jiang, Z.-M. Tsai, J.-H. Tsai, H.-T. Chen, and H. Wang, "An 86-to-108 GHz Amplifier in 90nm CMOS," IEEE Microwave and Wireless Components Letters, vol.18, no.2, pp. 124-126, Feb. 2008.
6. S.T. Nicolson and S.P. Voinigescu, "Methodology for Simultaneous Noise and Impedance Matching in W-Band LNAs," IEEE Compound Semiconductor Integrated Circuit Symp., pp. 279-282, Nov. 2006.
7. B. Heydari, M. Bohsali, E. Adabi, and A.M. Niknejad, "Low-Power mm-Wave Components up to 104GHz in 90nm CMOS," ISSCC Dig. Tech. Papers, pp. 200-597, Feb. 2007.