80-GHz tuned amplifier in bulk CMOS

IEEE Microwave and Wireless Components Letters

Volumn 18, Issue 2, 2008, Pages 121-125

  Zhang, Ning ^a,b   Hung, Chin Ming ^a,c   Kenneth, K O ^a,b  

^a IEEE

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

CMOS; Millimeter wave; Tuned amplifier; W band

Indexed keywords

BANDWIDTH; BIAS CURRENTS; CMOS INTEGRATED CIRCUITS; FREQUENCY BANDS; PHASE NOISE; TRANSISTORS;

NMOS TRANSISTORS; NOISE FIGURES; TUNED AMPLIFIERS;

AMPLIFIERS (ELECTRONIC);

EID: 38949093248     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2007.915131     Document Type: Article

References (11)

1. C.-M. Hung, L. Shi, I. Lagnado, and K. K. O., "A 25.9-GHz Voltage-Controlled Oscillator Fabricated in a CMOS Process," in Proc. VLSI Symp. Circuits, Jun. 2000, pp. 100-101.
2. B. A. Floyd, C.-M. Hung, and K. K. O., "A 15-GHz Wireless Interconnect Implemented in a 0.18- μm CMOS Technology Using Integrated Transmitters, Receivers, and Antennas," IEEE J. Solid-State Circuits, vol. 37, no. 5, pp. 543-552, May 2002.
3. M. Wetzel, L. Shi, K. Jenkins, P. R. de la Houssaye, Y. Taur, P. Asbeck, and I. Lagnado, "A 26.5 GHz silicon MOSFET 2:1 Dynamic Frequency Divider," IEEE Microw. Guided Wave Lett., vol. 10, no. 10, pp. 421-423, Oct. 2000.
4. L. M. Franca-Neto, R. Bishop, and B. Bloechel, "64 GHz and 100 GHz VCOs in 90 nm Using Optimum. Pumping Method," in ISSC Tech. Dig., San Francisco, CA, Feb. 2003, pp. 444-445.
5. C. H. Doan et al., "Millimeter-wave CMOS design," IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 144-155, Jan. 2005.
6. G. Gonzalez, Microwave Transistor Amplifier: Analysis and Design, 2nd ed. Upper Saddle River, NJ: Pearson Print on Demand, Jun. 1996.
7. D. K. Shaeffer and T. H. Lee, "A 1.5-V, 1.5-GHz CMOS low noise amplifier," IEEE J. Solid-State Circuits, vol. 32, no. 5, pp. 745-759, May 1997.
8. Y.-C. Ho, M. Biyani, J. Colvin, C. Smithhisler, and K. K. O., "A 3-V low noise amplifier implemented using a 0.8-7mu;m CMOS process with three metal layers for 900 MHz operation," Electron. Lett., vol. 32, no. 13, pp. 1191-1193, Jun. 1996.
9. T. Yao et al., "60-GHz PA and LNA in 90-μm RF-CMOS," in IEEE RFIC Symp. Dig., Jun. 2006, pp. 1-4.
10. C. Cao and K. K. O., "Millimeter-Wave Voltage-Controlled Oscillators in 0.13- μm CMOS Technology," IEEE J. Solid-State Circuits, vol. 41, no. 6, pp. 1297-1304, Jun. 2006.
11. C.-M. Lo et al., "A Miniature V-band 3-Stage Cascode LNA in 0.13 μm CMOS," in ISSCC Tech. Dig., Feb. 2006, pp. 1254-1255.