Low-temperature (210 °c) deposition of crystalline germanium via in situ disproportionation of GeI 2

Materials Research Bulletin

Volumn 47, Issue 11, 2012, Pages 3484-3488

  Restrepo, David T ^a   Lynch, Kristen E ^a   Giesler, Kyle ^a   Kuebler, Stephen M ^a   Blair, Richar G ^a,b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b National Center for Forensic Science   (United States)

Author keywords

A. Halides; A. Inorganic compound; A. Semiconductors; B. Vapor deposition; C. X ray diffraction

Indexed keywords

A. HALIDES; CRYSTALLINE GERMANIUM; DISPROPORTIONATIONS; GERMANIUM NANOSTRUCTURES; IN-SITU; LOW TEMPERATURES; POLYMER SUBSTRATE; RATE OF DEPOSITION; SYNTHETIC ROUTES;

CRYSTALLINE MATERIALS; DEPOSITS; GERMANIUM COMPOUNDS; GLASS; INORGANIC COMPOUNDS; X RAY DIFFRACTION;

GERMANIUM;

EID: 84866730156     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2012.06.072     Document Type: Article

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