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Volumn 6898, Issue , 2008, Pages

Ge photodetectors integrated in CMOS photonic circuits

Author keywords

Ge detectors; Near infrared; Optical communications; Si optoelectronics; Waveguide detectors

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER NETWORKS; GERMANIUM; NONMETALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONICS; SILICON; TECHNOLOGY;

EID: 42149172498     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.767035     Document Type: Conference Paper
Times cited : (6)

References (16)
  • 1
    • 0023108359 scopus 로고
    • Electrooptical effects in Silicon
    • R. A. Soref and B. R. Bennett, "Electrooptical effects in Silicon", IEEE J. Quantum Electron., vol. QE-23, pp. 123-129 (1987)
    • (1987) IEEE J. Quantum Electron , vol.QE-23 , pp. 123-129
    • Soref, R.A.1    Bennett, B.R.2
  • 2
    • 42149102234 scopus 로고    scopus 로고
    • http://www.kotura.com/products/uvoa.html
  • 3
    • 42149091846 scopus 로고    scopus 로고
    • A. Narasimha, et al. A 40-Gb/s QSFP Optoelectronic Transceiver in a 0.13um CMOS Silicon-on-insulator Technology submitted to OFC 2008. See also: http://www.luxtera.eom/content/view/102/89/
    • A. Narasimha, et al. "A 40-Gb/s QSFP Optoelectronic Transceiver in a 0.13um CMOS Silicon-on-insulator Technology" submitted to OFC 2008. See also: http://www.luxtera.eom/content/view/102/89/
  • 4
    • 0038147502 scopus 로고    scopus 로고
    • SiGe BiCMOS integrated circuits for high-speed serial communication links
    • D.J. Friedman, et al., "SiGe BiCMOS integrated circuits for high-speed serial communication links" IBM J. RES. & DEV., 47, 259 (2003)
    • (2003) IBM J. RES. & DEV , vol.47 , pp. 259
    • Friedman, D.J.1
  • 6
    • 21544464728 scopus 로고
    • 1-x/Si strained layer heterostructures
    • 1-x/Si strained layer heterostructures", Appl. Phys. Lett. 47, 322 (1985)
    • (1985) Appl. Phys. Lett , vol.47 , pp. 322
    • People, R.1    Bean, J.C.2
  • 7
    • 0000807184 scopus 로고    scopus 로고
    • A surfactantmediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface
    • J.L. Liu, C.D. Moore, G.D. U'Ren, Y.H. Luo, Y. Lu, G. Jin, S.G. Thomas, M.S. Goorsky, K.L. Wang, "A surfactantmediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface", Appl. Phys. Lett. 75, 1586 (1999)
    • (1999) Appl. Phys. Lett , vol.75 , pp. 1586
    • Liu, J.L.1    Moore, C.D.2    U'Ren, G.D.3    Luo, Y.H.4    Lu, Y.5    Jin, G.6    Thomas, S.G.7    Goorsky, M.S.8    Wang, K.L.9
  • 8
    • 0000059047 scopus 로고    scopus 로고
    • Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
    • M.T. Currie, S.B. Samavedam, T.A. Langdo, C.W. Leitz, E.A. Fitzgerald, " Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing", Appl. Phys. Lett. 72, 1718 (1998)
    • (1998) Appl. Phys. Lett , vol.72 , pp. 1718
    • Currie, M.T.1    Samavedam, S.B.2    Langdo, T.A.3    Leitz, C.W.4    Fitzgerald, E.A.5
  • 9
    • 33847626559 scopus 로고    scopus 로고
    • Analysis of Ultra-Thin Low Temperature SiGe Buffer For The Growth of High Quality Strain-Relaxed Ge on Si (100) by UHVCVD
    • T. H. Loh, et al. "Analysis of Ultra-Thin Low Temperature SiGe Buffer For The Growth of High Quality Strain-Relaxed Ge on Si (100) by UHVCVD", Appl. Phys. Lett. 90, 092108 (2007)
    • (2007) Appl. Phys. Lett , vol.90 , pp. 092108
    • Loh, T.H.1
  • 11
    • 42149180733 scopus 로고    scopus 로고
    • Germanium thin films on silicon for detection of near-infrared light
    • edited by H.S. Nalwa, Academic Press
    • G. Masini, L. Colace, and G. Assanto, "Germanium thin films on silicon for detection of near-infrared light" in Thin Films Handbook, edited by H.S. Nalwa, Academic Press, 2001, p.237
    • (2001) Thin Films Handbook , pp. 237
    • Masini, G.1    Colace, L.2    Assanto, G.3
  • 12
    • 0000565576 scopus 로고    scopus 로고
    • Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates
    • L. Colace, et al., "Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates", Appl. Phys. Lett., 76, 1231 (2000)
    • (2000) Appl. Phys. Lett , vol.76 , pp. 1231
    • Colace, L.1
  • 13
    • 0035366259 scopus 로고    scopus 로고
    • High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration
    • G. Masini, L. Colace, G. Assanto, H-C Luan, L.C. Kimerling, "High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration", IEEE Tran. Electr. Devices, 48, 1092 (2001)
    • (2001) IEEE Tran. Electr. Devices , vol.48 , pp. 1092
    • Masini, G.1    Colace, L.2    Assanto, G.3    Luan, H.-C.4    Kimerling, L.C.5
  • 14
    • 33749063712 scopus 로고    scopus 로고
    • Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications
    • S. Koester, et al., " Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications", IEEE J. Sel. Top. In Quant. Electronics, 12, 1489 (2006)
    • (2006) IEEE J. Sel. Top. In Quant. Electronics , vol.12 , pp. 1489
    • Koester, S.1
  • 15
    • 35349000724 scopus 로고    scopus 로고
    • 31GHz Ge n-i-p waveguide photodetectors on Silicon-on-insulator substrate
    • T. Yin, et al., "31GHz Ge n-i-p waveguide photodetectors on Silicon-on-insulator substrate", Optics Express, 15, 13965 (2007)
    • (2007) Optics Express , vol.15 , pp. 13965
    • Yin, T.1
  • 16
    • 33845669875 scopus 로고    scopus 로고
    • A Fully Integrated 20-Gb/s Optoelectronic Transceiver Implemented in a Standard 0.13-um CMOS SOI Technology
    • December
    • B. Analui et al, "A Fully Integrated 20-Gb/s Optoelectronic Transceiver Implemented in a Standard 0.13-um CMOS SOI Technology", IEEE Journal of Solid State Circuits, Vol. 41, No.12, December 2006, pp. 2945-55.
    • (2006) IEEE Journal of Solid State Circuits , vol.41 , Issue.12 , pp. 2945-2955
    • Analui, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.