Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal-oxide-semiconductor technology

Nanotechnology

Volumn 23, Issue 40, 2012, Pages

  Hyun, Younghoon ^a   Park, Youngsam ^a   Choi, Wonchul ^a   Kim, Jaehyeon ^a   Zyung, Taehyoung ^a   Jang, Moongyu ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS PROCESSS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; CONVENTIONAL PHOTOLITHOGRAPHY; ELECTRICAL CONDUCTIVITY; ELECTRICAL METHODS; EMBEDDED TESTS; P-TYPE; P-TYPE SILICON; POWER FACTORS; SCANNING THERMAL MICROSCOPY; SILICON NANOWIRES; SILICON-BASED; TEMPERATURE RANGE; THERMAL CONTACT RESISTANCE; THERMOELECTRIC NANOWIRES; TOTAL POWER;

AUTOMOBILE MANUFACTURE; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; FABRICATION; MOS DEVICES; NANOWIRES; SEEBECK COEFFICIENT; TEMPERATURE MEASUREMENT; TEMPERATURE SENSORS;

SILICON WAFERS;

EID: 84866552289     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/40/405707     Document Type: Article

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