Influences of ion-induced defects on growth of copper-phthalocyanine film on graphene substrates

Journal of Physical Chemistry C

Volumn 116, Issue 36, 2012, Pages 19278-19284

  Dou, Weidong ^a,b   Yang, Qingdan ^b   Lee, Chun Sing ^b  

^a SHAOXING UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON ION; AS-GROWN; ATOMIC FORCE MICROSCOPE (AFM); COPPER-PHTHALOCYANINE; GRAPHENE SHEETS; HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; ION-INDUCED DEFECTS; LOW DEFECT DENSITIES; SMOOTH SURFACE;

ATOMIC FORCE MICROSCOPY; DEFECTS; FILM GROWTH; IONS; NUCLEATION; SHEET METAL; SUBSTRATES; X RAY DIFFRACTION;

GRAPHENE;

EID: 84866419750     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp307059p     Document Type: Article

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