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Volumn 57, Issue 27, 2012, Pages 3556-3559

An ultralow-energy negative cluster ion beam system and its application in preparation of few-layer graphene

Author keywords

cluster beam; grapheme; negative ion; Raman scattering; ultralow energy; ultrashallow implantation

Indexed keywords


EID: 84866130450     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-012-5397-3     Document Type: Letter
Times cited : (6)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.