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Volumn 57, Issue 27, 2012, Pages 3556-3559
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An ultralow-energy negative cluster ion beam system and its application in preparation of few-layer graphene
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Author keywords
cluster beam; grapheme; negative ion; Raman scattering; ultralow energy; ultrashallow implantation
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Indexed keywords
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EID: 84866130450
PISSN: 10016538
EISSN: 18619541
Source Type: Journal
DOI: 10.1007/s11434-012-5397-3 Document Type: Letter |
Times cited : (6)
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References (18)
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