On-chip fabrication of ultrasensitive NO 2 sensors based on silicon nanowires

Applied Physics Letters

Volumn 101, Issue 10, 2012, Pages

  Cuscunà, Massimo ^a   Convertino, Annalisa ^a   Zampetti, Emiliano ^a   Macagnano, Antonella ^a   Pecora, Alessandro ^a   Fortunato, Guglielmo ^a   Felisari, Laura ^b   Nicotra, Giuseppe ^a   Spinella, Corrado ^a   Martelli, Faustino ^a  

^a CNR   (Italy)

^b IOM CNR LABORATORIO TASC   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMORESISTIVE SENSORS; FABRICATED SENSORS; GROWTH SUBSTRATES; INTER-DIGITATED ELECTRODES; ON-CHIP FABRICATION; OXIDIZED SILICON; PPB LEVELS; ROOM TEMPERATURE; SENSOR CHARACTERISTICS; SILICON NANOWIRES; SILICON TECHNOLOGIES; ULTRASENSITIVE;

FABRICATION; NITROGEN OXIDES; SENSORS; SILICON OXIDES;

NANOWIRES;

EID: 84866052892     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748099     Document Type: Article

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