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Volumn 358, Issue 17, 2012, Pages 2443-2445
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Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition
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Author keywords
MOCVD; Photoluminescence; Rare earth doped semiconductors; ZnO
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Indexed keywords
BAND GAP ENERGY;
PHOTOLUMINESCENCE MEASUREMENTS;
PHOTOLUMINESCENCE PROPERTIES;
PL INTENSITY;
RARE EARTH DOPED;
ROOM TEMPERATURE;
SHARP EMISSION;
TIME-RESOLVED PL MEASUREMENT;
WURZITE;
ZNO;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOLUMINESCENCE;
VAPORS;
ZINC OXIDE;
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EID: 84865801398
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2011.12.099 Document Type: Conference Paper |
Times cited : (26)
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References (16)
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