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Volumn 358, Issue 17, 2012, Pages 2443-2445

Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition

Author keywords

MOCVD; Photoluminescence; Rare earth doped semiconductors; ZnO

Indexed keywords

BAND GAP ENERGY; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; RARE EARTH DOPED; ROOM TEMPERATURE; SHARP EMISSION; TIME-RESOLVED PL MEASUREMENT; WURZITE; ZNO;

EID: 84865801398     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2011.12.099     Document Type: Conference Paper
Times cited : (26)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.