Blanket and patterned growth of CdTe on (211)Si substrates by metal-organic vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 8-9, 2012, Pages 1712-1715

  Bhat, Ishwara B ^a   Rao, Sunil R ^a   Shintri, Shashidhar ^b   Jacobs, Randolph N ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Rensselaer Polytechnic Institute   (United States)

^c U S ARMY   (United States)

Author keywords

CdTe; Epitaxial lateral overgrowth; Metalorganic chemical vapor deposition; Selective epitaxy

Indexed keywords

CDTE; CIRCULAR PATTERN; EPITAXIAL LATERAL OVERGROWTH; ETCH PIT DENSITY; GROWTH WINDOW; HGCDTE; INFRARED DETECTOR MATERIALS; METAL-ORGANIC VAPOR PHASE EPITAXY; PARALLEL STRIPES; PATTERNED GROWTH; PATTERNED LAYERS; PROCESS PARAMETERS; SELECTIVE EPITAXY; SELECTIVE NUCLEATION; SI SUBSTRATES; THICK LAYERS; THREADING DISLOCATION DENSITIES;

CADMIUM TELLURIDE; EPITAXIAL GROWTH; GERMANIUM; MERCURY COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SILICON; VAPORS; X RAY DIFFRACTION; ZINC COMPOUNDS;

GROWTH (MATERIALS);

EID: 84865741761     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100765     Document Type: Article

References (14)

1. G. Brill, Y. Chen, P. Wijewarnasuriya, and N. Dhar, Proc. SPIE 7419, 74190L (2009)
2. R. J. Koestner and H. F. Schaake, J. Vac. Sci. Technol. A 6, 2834 (1988)
3. W. J. Everson, C. K. Ard, J. L. Sepich, B. E. Dean, G. T. Neugebauer, and H. F. Schaake, J. Electron. Mater. 24, 505 (1995)
4. N. K. Dhar, C. E. C. Wood, A. Gray, H. Y. Wei, L. Salamanca- Riba, and J. H. Dinan, J. Vac. Sci. Technol. B 14, 2366 (1996)
5. S. Rujirawat, L. A. Almeida, Y. P. Chen, S. Sivananthan, and D. J. Smith, Appl. Phys. Lett. 71, 1810 (1997)
6. B-Y. Tsaur, R. W. McClelland, John C. C. Fan, R. P. Gale, J. P. Salerno, B. A. Vojak, and C. O. Bozler, Appl. Phys. Lett. 41, 347 (1982)
7. Y. Ujiie and T. Nishinaga, Jpn. J. Appl. Phys. 28, L337 (1989)
8. T. S. Zheleva, O. H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2472 (1997)
9. M. G. Mauk and B. W. Feyock, J. Cryst. Growth 211, 73 (2000)
10. W. Kern and D. A. Puotinen, RCA Rev. 31, 187 (1970)
11. S. R. Rao, S. S. Shintri, J. K. Markunas, R. N. Jacobs, and I. B. Bhat, J. Electron. Mater. 39, 996 (2010)
12. S. R. Rao, S. S. Shintri, J. K. Markunas, R. N. Jacobs, and I. B. Bhat, J. Electron. Mater. 40, 1790 (2011)
13. S. R. Rao, S. S. Shintri, and I. B. Bhat, J. Electron. Mater. 38, 1618 (2009)
14. I. Bhat and R. Zhang, J. Electron. Mater. 35, 1293 (2006)