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Volumn 211, Issue 1, 2000, Pages 73-77

Vapor-phase epitaxial lateral overgrowth of ZnSe on GaAs

Author keywords

[No Author keywords available]

Indexed keywords

MASKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; THERMAL STRESS;

EID: 0033901683     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00800-3     Document Type: Article
Times cited : (6)

References (14)
  • 8
    • 0343428198 scopus 로고
    • Fundamentals of epitaxial growth and atomic layer epitaxy
    • R.K. Willardson, Beer A.C. New York: Academic Press
    • Watanabe H., Mizutani T., Usui A. Fundamentals of epitaxial growth and atomic layer epitaxy. Willardson R.K., Beer A.C. Semiconductors and Semimetals. Vol. 30:1990;Academic Press, New York.
    • (1990) Semiconductors and Semimetals , vol.30
    • Watanabe, H.1    Mizutani, T.2    Usui, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.