THz spectroscopy of VO 2 epitaxial films: Controlling the anisotropic properties through strain engineering

New Journal of Physics

Volumn 14, Issue , 2012, Pages

  Abreu, Elsa ^a   Liu, Mengkun ^a   Lu, Jiwei ^b   West, Kevin G ^b   Kittiwatanakul, Salinporn ^b   Yin, Wenjing ^b   Wolf, Stuart A ^b   Averitt, Richard D ^a  

^a USA   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC PROPERTY; BULK SINGLE CRYSTALS; COMPLEX MATERIALS; CONDUCTIVITY MEASUREMENTS; EPITAXIAL THIN FILMS; FAR-INFRARED; MICROSCOPIC RESPONSE; STRAIN CONDITIONS; STRAIN ENGINEERING; STRUCTURAL TRANSITION TEMPERATURE; THZ SPECTROSCOPY; THZ TIME DOMAIN SPECTROSCOPY; TIO; UNIAXIAL TENSILE STRAIN; VANADIUM DIOXIDE THIN FILMS; X-RAY DIFFRACTION MEASUREMENTS;

ANISOTROPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; OXIDE MINERALS; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE; TITANIUM DIOXIDE; X RAY DIFFRACTION;

MATERIALS PROPERTIES;

EID: 84865712600     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/14/8/083026     Document Type: Article

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