Electrical measurements of a VO2 thin film under high pressure of 25 GPa generated by a load-controllable point-contact structure

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Sakai, Joe ^a  

^a UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC PROPERTIES; HIGH PRESSURE LIQUID CHROMATOGRAPHY; HYDROSTATIC PRESSURE; POINT CONTACTS; PRESSURE EFFECTS; THICK FILMS; THIN FILM DEVICES; THIN FILMS; VANADIUM COMPOUNDS;

CONTACT AREAS; CONTACT STRUCTURES; CONTACT SYSTEMS; ELECTRIC-FIELD; ELECTRICAL MEASUREMENTS; ELECTRICAL PROPERTIES; HIGH PRESSURES; METAL SUBSTRATES; PRESSURE GENERATORS; TI SUBSTRATES; TRANSITION VOLTAGES; VO2 FILMS; VO2 THIN FILMS;

ELECTRIC GENERATORS;

EID: 54049115910     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2986146     Document Type: Article

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19. The probe used in this experiment was different from the one used in R-T measurements. The pressure/revolution ratio was re-estimated for this probe to be 12.6 GPa/cycle from the revolution dependence of RH.