Characteristics of W-and Ti-doped VO2 thin films prepared by sol-gel method

Electrochemical and Solid-State Letters

Volumn 11, Issue 6, 2008, Pages

  Chae, B G ^a   Kim, H T ^a   Yun, S J ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRODEPOSITION; SOL-GEL PROCESS; SUPERCONDUCTING TRANSITION TEMPERATURE;

METAL STATE; TRANSITION BEHAVIORS;

THIN FILMS;

EID: 42349114282     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2903208     Document Type: Article

References (15)

1. F. A. Chudnovskii, Sov. Phys. Tech. Phys. SPTPA3 0038-5662, 20, 999 (1976).
2. G. Stefanovich, A. Pergament, and D. Stefanovich, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/12/41/310, 12, 8837 (2000).
3. H. T. Kim, B. G. Chae, D. H. Youn, S. L. Maeng, G. Kim, K. Y. Kang, and Y. S. Lim, New J. Phys. NJOPFM 1367-2630 10.1088/1367-2630/6/1/052, 6, 52 (2004).
4. H. T. Kim, B. G. Chae, D. H. Youn, G. Kim, K. Y. Kang, S. J. Lee, K. Kim, and Y. S. Lim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1941478, 86, 242101 (2005).
5. B. G. Chae, H. T. Kim, D. H. Youn, and K. Y. Kang, Physica B PHYBE3 0921-4526 10.1016/j.physb.2005.07.032, 369, 76 (2005).
6. B. G. Chae, H. T. Kim, S. J. Yun, B. J. Kim, Y. W. Lee, D. H. Youn, and K. Y. Kang, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.2135430, 9, C12 (2006).
7. M. Borek, F. Qian, V. Nagabushnam, and R. K. Singh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.110177, 63, 3288 (1993).
8. D. P. Partlow, S. R. Gurkovich, K. C. Radford, and L. J. Denes, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.350272, 70, 443 (1991).
9. B. J. Kim, Y. W. Lee, B. G. Chae, S. J. Yun, S. Y. Oh, H. T. Kim, and Y. S. Lim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2431456, 90, 023515 (2007).
10. P. Jin and S. Tanemura, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.34.2459, 34, 2459 (1995).
11. M. Soltani, M. Chaker, E. Haddad, R. V. Kruzelecky, and J. Margot, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1788883, 85, 1958 (2004).
12. Z. P. Wu, A. Miyashita, S. Yamamoto, H. Abe, I. Nashiyama, K. Narumi, and H. Naramoto, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371519, 86, 5311 (1999).
13. I. Takahashi, M. Hibino, and T. Kudo, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.40.1391, 40, 1391 (2001).
14. T. J. Hanlon, J. A. Coath, and M. A. Richardson, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(03)00602-3, 436, 269 (2003).
15. F. Beteille, R. Morineau, J. Livage, and M. Nagano, Mater. Res. Bull. MRBUAC 0025-5408 10.1016/S0025-5408(97)00084-6, 32, 1109 (1997).