Monolayer graphene nanoribbon homojunction characteristics

Science of Advanced Materials

Volumn 4, Issue 7, 2012, Pages 753-756

  Ahmadi, Mohammad Taghi ^a,b   Rahmani, Meisam ^a   Ghadiry, Mahdiar ^c   Ismail, Razali ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b URMIA UNIVERSITY   (Iran)

^c ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

Current voltage characteristic; Homo junction configuration; Monolayer graphene nanoribbon; Schottky diode

Indexed keywords

EID: 84865653012     PISSN: 19472935     EISSN: 19472943     Source Type: Journal    
DOI: 10.1166/sam.2012.1367     Document Type: Article

References (28)

1. W. S. Zhao, G. Agnus, V. Derycke, A. Filoramo, J.-P. Bourgoin, and C. Gamrat, Nanotechnology 21, 175202 (2010).
2. Z. Y. Zhang et al., Nano Letters 8, 3696 (2008).
3. P. Zhao, M. Choudhury, K. Mohanram, and J. Guo, Nano Research 1, 395 (2008).
4. Z. Y. Zhang et al., Acs Nano. 3, 3781 (2009).
5. V. Vitale, A. Curioni, and W. Andreoni, Journal of the American Chemical Society 130, 5848 (2008).
6. B. Philip, J. Xie, J. K. Abraham, and Vijay K. Varadan, Smart Materials & Structures 13, N105 (2004).
7. V. Barone, O. Hod, and G. E. Scuseria, Nano Letters 6, 2748 (2006).
8. Y. X. Yang and R. Murali, IEEE Electron Device Letters 31, 237 (2010).
9. B. N. Szafranek, D. Schall, M. Otto, D. Neumaier, and H. Kurz, Applied Physics Letters 96, 112103 (2010).
10. D. H. Huang and G. Gumbs, Physical Review B 80, 033411 (2009).
11. Y. Takane, Journal of the Physical Society of Japan 79, 024711 (2010).
12. H. Kumazaki and D. S. Hirashima, Journal of the Physical Society of Japan 78, 094701 (2009).
13. J. Debdeep, T. Fang, Q. Zhang, and H. Xing, Applied Physics Letters 93, 112106-1 (2008).
14. T. Low, S. Hong, J. Appenzeller, S. Datta, and M. Lundstrom, IEEE Trans. Electron Devices 56, 1292 (2008).
15. V. Ryzhii, M. Ryzhii, V. Mitin, and M. S. Shur, Appl. Phys. Express 2, 1 (2009).
16. V. V. Cheianov, V. Fal'ko, and B. L. Altshuler, Science 315, 1252 (2007).
17. M. I. Katsnelson, K. S. Novoselov, and A. K. Geim, Nature Phys. 2, 620 (2006).
18. S. Sankaran and K. O. Kenneth, IEEE Electron Device Lett. 26, 492 (2005).
19. J. Zhu and J. C. S. Woo, A novel graphene channel field effect transistor with Schottky tunneling source and drain, Essderc 2007, Proceedings of the 37th European Solid-State Device Research Conference (2007), pp. 243-246.
20. G. C. Liang, N. Neophytou, D. E. Nikonov, and M. S. Lundstrom, IEEE Transactions on Electron Devices 54, 677 (2007).
21. A. Kargar and L. Chengkuo, 9th IEEE Conference on Graphene Nanoribbon Schottky Diodes Using Asymmetric Contacts, IEEENANO 2009 Nanotechnology (2009).
22. C. C. Chen, M. Aykol, C. C. Chang, A. F. J. Levi, and S. B. Cronin, Nano Letters 11, 1863 (2011).
23. M. T. Ahmadi, R. Ismail, M. L. P. Tan, and V. K. Arora, Journal of Nanomaterials 2008, 769250 (2008).
24. M. T. Ahmadi et al., MOSFET-like carbon nanotube field effect transistor model, Nanotech Conference & Expo 2009, Technical Proceedings (2009), Vol. 3, pp. 574-579.
25. K. Wakabayashi, M. Fujita, H. Ajiki, and M. Sigrist, Physical Review B 59, 8271 (1999).
26. X.-F. Li, L.-L. Wang, K.-Q. Chen, and Y. Luo, Journal of Physics: Condensed Matter. 24, 095801 (2012).
27. D. A. Neamen, Semiconductor Physics and Devices, 3rd edn., University of New Mexico, Mexico (2003).
28. J. Eriksson, N. Rorsman, and H. Zirath, IEEE Transactions on Microwave Theory and Techniques 51 (2003).