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Physical Review Letters

Volumn 109, Issue 9, 2012, Pages

Topological insulating in GeTe/Sb 2Te 3 phase-change superlattice

(5) Sa, Baisheng a,c,d Zhou, Jian a Sun, Zhimei a Tominaga, Junji b Ahuja, Rajeev c,d

a XIAMEN UNIVERSITY (China)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c UPPSALA UNIVERSITY (Sweden)

d ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ARTIFICIAL MATERIAL; BUILDING BLOCKES; COMPRESSIVE STRAIN; DATA STORAGE; PHASE CHANGES; PHASE-CHANGE RANDOM ACCESS MEMORY; QUANTUM COMPUTING; TOPOLOGICAL INVARIANTS;

GERMANIUM; INSULATION; PHASE CHANGE MEMORY; QUANTUM COMPUTERS; TOPOLOGY;

SUPERLATTICES;

EID: 84865602480 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.109.096802 Document Type: Article

Times cited : (143)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.