Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge 2Sb 2Te 5 phase-change memory material

Proceedings of the National Academy of Sciences of the United States of America

Volumn 108, Issue 26, 2011, Pages 10410-10414

  Sun, Zhimei ^a   Zhou, Jian ^a   Pan, Yuanchun ^a   Song, Zhitang ^b   Mao, Ho Kwang ^c   Ahuja, Rajeev ^d,e  

^a XIAMEN UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c GEOPHYSICAL LABORATORY   (United States)

^d UPPSALA UNIVERSITY   (Sweden)

^e ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

High pressure; Phase change mechanism; Semiconductor chalcogenide

Indexed keywords

CHALCOGEN; SODIUM CHLORIDE;

AMORPHOUS AMORPHOUS TRANSITION; ARTICLE; CALCULATION; CHEMICAL STRUCTURE; CONCEPTUAL FRAMEWORK; CONTROLLED STUDY; CRYSTAL STRUCTURE; CRYSTALLIZATION; ENVIRONMENTAL TEMPERATURE; MELTING POINT; MOLECULAR DYNAMICS; PHASE TRANSITION; POLYMORPHIC AMORPHOUS TRANSITION; PRESSURE GRADIENT; PRESSURE INDUCED REVERSIBLE AMORPHIZATION; PRIORITY JOURNAL; SEMICONDUCTOR; TRIGONAL FRAMEWORK;

EID: 79960586789     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1107464108     Document Type: Article

References (29)

1. Kolobov AV, et al. (2004) Understanding the phase-change mechanism of rewritable optical media. Nat Mater 3:703-708.
2. Sun ZM, Zhou J, Ahuja R (2006) Structure of phase change materials for data storage. Phys Rev Lett 96:055507.
3. Welnic W, et al. (2006) Unravelling the interplay of local structure and physical properties in phase-change materials. Nat Mater 5:56-62.
4. 5. Phys Rev Lett 96:255501.
5. Wuttig M, et al. (2007) The role of vacancies and local distortions in the design of new phase-change materials. Nat Mater 6:122-128. (Pubitemid 46197648)
6. Sun ZM, Zhou J, Ahuja R (2007) Unique melting behavior in phase-change materials for rewritable data storage. Phys Rev Lett 98:055505.
7. 5 and GeTe. Phys Rev B 76:235201.
8. 5. Phys Rev B 76:054101.
9. Hegedus J, Elliott SR (2008) Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials. Nat Mater 7:399-405. (Pubitemid 351596372)
10. Sun ZM, et al. (2008) Fast crystallization of chalcogenide glass for rewritable memories. Appl Phys Lett 93:06191-06193.
11. 3)n compounds. Phys Rev B 78:224111.
12. 5 Alloy. Phys Rev Lett 102:075504.
13. 5 glass. Phys Rev Lett 103:195502.
14. Ovshinsky SR (1968) Reversible electrical switching phenomena in disordered structures. Phys Rev Lett 21:1450-1453.
15. Lankhorst MHR, Ketelaars BWSMM, Wolters RAM (2005) Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nat Mater 4:347-352. (Pubitemid 40450216)
16. 3 pseudobinary amorphous thin films for an optical disk memory. J Appl Phys 69:2849-2856.
17. 5: A new insight into phase-change optical recording. Phys Rev Lett 97:035701.
18. 5. Appl Phys Lett 93:031918.
19. 5. Phys Rev Lett 103:115502.
20. Caravati S, et al. (2009) Unravelling the mechanism of pressure induced amorphization of phase change materials. Phys Rev Lett 102:205502.
21. 5. J Appl Phys 108:083519.
22. 5. Phys Rev B 81:245211.
23. Zunger A, Wei SH, Ferreira LG, Bernard JE (1990) Special quasirandom structures. Phys Rev Lett 65:353-356.
24. Silvi B, Savin A (1994) Classification of chemical bonds based on topological analysis of electron localization funcations. Nature 371:683-686. (Pubitemid 24329613)
25. Savin A, Steffen N, Wengert S, Fässler T (1997) ELF: The electron localization function. Angew Chem Int Ed Engl 36:1808-1832.
26. Kresse G, Hafner J (1994) Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium. Phys Rev B 49:14251.
27. Kresse G, Jouber D (1999) From ultrasoft pseudopotentials to the projector augmented wave method. Phys Rev B 59:1758-1775.
28. Perdew JP, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 77:3865-3868. (Pubitemid 126631804)
29. Nosé S (1991) Constant temperature molecular-dynamics methods. Prog Theor Phys Suppl 103:1-46.