Antireflection coating design for triple-junction III-VGe high-efficiency solar cells using low absorption PECVD silicon nitride

IEEE Journal of Photovoltaics

Volumn 2, Issue 3, 2012, Pages 393-397

  Homier, Ram ^a   Jaouad, Abdelatif ^a   Turala, Artur ^a   Valdivia, Christopher E ^b   Masson, Denis ^b   Wallace, Steven G ^b   Fafard, Simon ^b   Arès, Richard ^a   Aimez, Vincent ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b Cyrium Technologies Inc   (Canada)

Author keywords

Antireflection coating (ARC); concentrated photovoltaic (CPV); passivation; plasma enhanced chemical vapor deposition (PECVD); silicon nitride

Indexed keywords

BROADBAND ABSORPTION; CURRENT MATCHING; DOUBLE LAYERS; HIGH REFRACTIVE INDEX; HIGH-EFFICIENCY SOLAR CELLS; LAYER PARAMETERS; LOW FREQUENCY; MULTI JUNCTION SOLAR CELLS; OPTIMAL VALUES; PECVD SILICON NITRIDE; PHOTOVOLTAIC; REFLECTION LOSS; SHORT-WAVELENGTH; STANDARD CONDITIONS; TRIPLE JUNCTION SOLAR CELLS; TRIPLE-JUNCTIONS; WAVELENGTH RANGES;

ANTIREFLECTION COATINGS; COATINGS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON NITRIDE; SILICON OXIDES; SILICON WAFERS; SOLAR CELLS; VAPORS; WAVELENGTH;

NANOSTRUCTURED MATERIALS;

EID: 84865166284     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2198793     Document Type: Article

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