GaAs passivation by low-frequency plasma-enhanced chemical vapour deposition of silicon nitride

Electronics Letters

Volumn 40, Issue 16, 2004, Pages 1024-1026

  Jaouad, A ^a,b   Aimez, V ^b   Aktik, C ^b  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b FACULTÉ DES SCIENCES BEN M SIK   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DEOXIDANTS; ETCHING; FERMI LEVEL; FREQUENCIES; INTERFACES (MATERIALS); PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

DEOXIDATION; EXCITATION FREQUENCIES; HYDROGEN IMPLANTATION; SURFACE POTENTIAL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4043145880     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045328     Document Type: Article

References (7)

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4. 4)2S passivated GaAs MIS devices using low-frequency plasma-enhanced chemical vapor deposition', J. Vac. Sci. Technol. A, 2004, 22, (3) (to be published)
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7. Aspnes, D.E., and Studna, A.A.: 'Stability of (100) GaAS surfaces in aqueous solutions', Appl. Phys. Lett., 1985, 46, (11), pp. 1071-1073