Charge transfer between isomer domains on n +-doped Si(111)-2×1: Energetic stabilization

Journal of Physics Condensed Matter

Volumn 24, Issue 35, 2012, Pages

  Feenstra, R M ^a   Bussetti, G ^b   Bonanni, B ^b   Violante, A ^b   Goletti, C ^b   Chiaradia, P ^b   Betti, M G ^c   Mariani, C ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVING FORCES; ELECTROSTATIC EFFECT; LINE SHAPE; LOW TEMPERATURES; LOWER ENERGIES; N-DOPED; PHOTOEMISSION SPECTRA; RELATIVE ABUNDANCE; SI (1 1 1); TOTAL ENERGY DIFFERENCES; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

CHARGE TRANSFER; PHOTOELECTRON SPECTROSCOPY; SILICON; STABILIZATION;

ISOMERS;

EID: 84865155381     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/35/354009     Document Type: Article

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