Buckling of Si and Ge(111)2 × 1 surfaces

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1671-1674

  Nie, Shu ^a   Feenstra, R M ^a   Lee, Ji Young ^b   Kang, Myung Ho ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORRUGATION SHIFT; DOMAIN BOUNDARIES; INVERSE PHOTOEMISSION SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY (STM);

BAND STRUCTURE; BUCKLING; CHEMICAL BONDS; COMPUTER SIMULATION; FERMI LEVEL; GERMANIUM; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHOTOEMISSION; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SILICON;

SURFACE CHEMISTRY;

EID: 4344712866     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1705647     Document Type: Conference Paper

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