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Volumn 12, Issue 7, 2012, Pages 5160-5163
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3-D simulation of nanopore structure for DNA sequencing
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Author keywords
3D Simulation; Electron Af?nity; Mobility; Nanopore; Parameter Modeling
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Indexed keywords
3D SIMULATIONS;
BANDBENDING;
DNA SEQUENCING;
DOPED SILICON;
I-V BEHAVIOR;
IONIC SOLUTIONS;
MEASUREMENT DATA;
PARAMETER MODELING;
CARRIER MOBILITY;
FIELD EFFECT TRANSISTORS;
NANOPORES;
SILICON OXIDES;
THREE DIMENSIONAL COMPUTER GRAPHICS;
TOOLS;
THREE DIMENSIONAL;
DNA;
NANOMATERIAL;
ARTICLE;
CHEMICAL MODEL;
CHEMISTRY;
COMPUTER AIDED DESIGN;
CONDUCTOMETRY;
CONFORMATION;
DNA SEQUENCE;
EQUIPMENT;
EQUIPMENT DESIGN;
GENETICS;
INSTRUMENTATION;
NANOTECHNOLOGY;
SEMICONDUCTOR;
THREE DIMENSIONAL IMAGING;
ULTRASTRUCTURE;
COMPUTER-AIDED DESIGN;
CONDUCTOMETRY;
DNA;
EQUIPMENT DESIGN;
EQUIPMENT FAILURE ANALYSIS;
IMAGING, THREE-DIMENSIONAL;
MODELS, CHEMICAL;
MOLECULAR CONFORMATION;
NANOSTRUCTURES;
NANOTECHNOLOGY;
SEQUENCE ANALYSIS, DNA;
TRANSISTORS, ELECTRONIC;
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EID: 84865138127
PISSN: 15334880
EISSN: 15334899
Source Type: Journal
DOI: 10.1166/jnn.2012.6384 Document Type: Article |
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Times cited : (9)
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References (9)
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