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Volumn 12, Issue 7, 2012, Pages 5774-5777

In/Ga inter-diffusion in InAs quantum dot in InGaAs/GaAs asymmetric quantum well

Author keywords

Asymetric InGaAs GaAs Quantum Well; In Ga Inter Diffusion; InAs Quantum Dot; Varshni Relation

Indexed keywords

ASYMMETRIC QUANTUM WELLS; BULK VALUE; INAS QUANTUM DOTS; INGAAS/GAAS; INTEGRATED EMISSIONS; INTER-ATOMIC DISTANCES; NONRADIATIVE DEFECTS; PHOTOLUMINESCENCE SPECTRUM; POWER DEPENDENCE; TEMPERATURE INCREASE; VARSHNI RELATION;

EID: 84865112764     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2012.6280     Document Type: Article
Times cited : (12)

References (20)
  • 7
    • 49949133713 scopus 로고
    • Elsevier, Amsterdam
    • Y. P. Varshni, Physica, Elsevier, Amsterdam (1967), Vol. 34, p. 149.
    • (1967) Physica , vol.34 , pp. 149
    • Varshni, Y.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.