Size and oxygen passivation induced reversal of photoconducting behaviour in CdS nanorods

Nanotechnology

Volumn 23, Issue 35, 2012, Pages

  Gupta, Saatviki ^a,b   Mehta, B R ^a   Satsangi, V R ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b DAYALBAGH EDUCATIONAL INSTITUTE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; CDS NANOROD; COMPOUND SEMICONDUCTORS; DEGREE OF CRYSTALLINITY; DENSITY OF DEFECTS; EFFECT OF OXYGEN; INDUCED DEFECTS; IV CHARACTERISTICS; LIGHT CONDITIONS; N-TYPE SEMICONDUCTORS; OPTICAL SWITCHING; OXYGEN ANNEALING; OXYGEN PASSIVATION; SPECTRAL DEPENDENCES; TEMPERATURE RANGE; VACUUM-ANNEALING;

ANNEALING; CADMIUM COMPOUNDS; CADMIUM SULFIDE; DESORPTION; NANORODS; OPTOELECTRONIC DEVICES; OXYGEN; PASSIVATION; QUANTUM EFFICIENCY; STOICHIOMETRY; VACUUM;

GAS ADSORPTION;

EID: 84865100612     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/35/355702     Document Type: Article

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