Grain structure of thin-film silicon by zone melting recrystallization on SiC base layer

Journal of Crystal Growth

Volumn 357, Issue 1, 2012, Pages 20-24

  Kunz, T ^a   Hessmann, M T ^a   Auer, R ^a   Bochmann, A ^b,e   Christiansen, S ^c   Brabec, C J ^a,d  

^a BAVARIAN CENTER FOR APPLIED ENERGY RESEARCH ZAE BAYERN   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^e Department Sci Tec Group Prof Teichert   (Germany)

Author keywords

A1. Defects; A1. Electron backscattering diffraction; A1. Twin boundaries; A3. Zone melting recrystallization; B1. Solar cells; B2. Semiconducting silicon

Indexed keywords

BARRIER LAYERS; BASE LAYERS; COMPREHENSIVE MODEL; DEFECT ETCHING; ELECTRON BACK SCATTER DIFFRACTION; ELECTRON BACKSCATTERING DIFFRACTION; ELECTRON-BEAM-INDUCED CURRENT; ELECTRONIC ACTIVITY; GRAIN ORIENTATION; GROWTH REGIME; SCAN DIRECTION; STRIPE STRUCTURE; SUBGRAIN BOUNDARIES; THIN FILM SILICON; THIN-FILM SOLAR CELLS; TWIN BOUNDARIES; TWINNING STRUCTURES; ZONE MELTING RECRYSTALLIZATION;

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; DIFFRACTION; ELECTRONIC PROPERTIES; GRAIN SIZE AND SHAPE; METALLURGY; RECRYSTALLIZATION (METALLURGY); SILICON CARBIDE; SOLAR CELLS; SOLIDS; ZONE MELTING;

SILICON OXIDES;

EID: 84864826550     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.07.007     Document Type: Article

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