Origin of enhanced hole injection in inverted organic devices with electron accepting interlayer

Advanced Functional Materials

Volumn 22, Issue 15, 2012, Pages 3261-3266

  Small, Cephas E ^a,c   Tsang, Sai Wing ^c   Kido, Junji ^a   So, Shu Kong ^b   So, Franky ^c  

^a YAMAGATA UNIVERSITY   (Japan)

^b HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

^c University of Florida   (United States)

Author keywords

charge injection; inverted; organic electronics

Indexed keywords

BOTTOM HOLE; CURRENT VOLTAGE; DARK INJECTION; ELECTRON ACCEPTOR; ELECTRON-ACCEPTING; HOLE INJECTION; HOLE TRANSPORTING LAYERS; HOLE-ONLY DEVICE; INDIUM TIN OXIDE ELECTRODES; INJECTION EFFICIENCY; INVERTED; INVERTED DEVICES; MOLYBDENUM TRIOXIDE; ORGANIC DEVICES; ORGANIC ELECTRONICS; ORGANIC LIGHT-EMITTING DEVICES; SPACE-CHARGE-LIMITED;

CHARGE TRANSFER; EFFICIENCY; ELECTRON INJECTION; MOLYBDENUM OXIDE; NAPHTHALENE; TIN; TIN OXIDES;

CHARGE INJECTION;

EID: 84864765401     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201200185     Document Type: Article

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