9 kV, 1 cm2 SiC gate turn-off thyristors

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 1017-1020

  Agarwal, Anant ^a   Zhang, Qingchun ^a   Callanan, Robert ^a   Capell, Craig ^a   Burk, Albert ^a   O'Loughlin, Michael ^a   Palmour, John ^a   Temple, Victor ^b   Stahlbush, Robert ^c   Caldwell, Joshua ^c   O'Brien, Heather ^d   Scozzie, Charles ^d  

^a Arkansas Power Electronics International Inc   (United States)

^b Silicon Power Corp   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

BPD; GTO; High power; High voltage; SiC; Stability

Indexed keywords

CONVERGENCE OF NUMERICAL METHODS; LEAKAGE CURRENTS; VOLTAGE CONTROL;

BASAL PLANE DISLOCATIONS; CURRENT CAPABILITY; FORWARD VOLTAGE DROPS; GATE TURN-OFF THYRISTORS; HIGH POWER; HIGH VOLTAGE; LOW-LEAKAGE CURRENT; STATIC AND DYNAMIC CHARACTERISTICS;

SILICON CARBIDE;

EID: 77955451764     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.1017     Document Type: Conference Paper

References (2)

1. S. E. Saddow and A. Agarwal, Artech House (2004), p. 177.
2. A. Agarwal, C. Capell, Q. Zhang, J. Richmond, R. Callanan, M. O'Loughlin, A. Burk, J. Melcher, J. Palmour, V. Temple, H. O'Brien and C. J. Scozzie, presented at 17th IEEE International Pulsed Power Conference, Washington DC, June 28 - July 2, 2009.