Structural and impedance spectroscopy study of Al-doped ZnO nanorods grown by sol-gel method

Microelectronics International: An International Journal

Volumn 29, Issue 3, 2012, Pages 131-135

  Kashif, Muhammad ^a   Hashim, Uda ^a   Ali, Eaqub ^a   Saif, Ala'eddin A ^a   Muhammad Usman Ali, Syed ^b   Willander, Magnus ^b  

^a UNIVERSITY MALAYSIA PERLIS   (Malaysia)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Electrical impedance; Impedance; Microelectronics; Nanorods; Sol gel; Temperature; ZnO

Indexed keywords

2-METHOXYETHANOL; AL-DOPED ZNO; CHARGE-TRANSPORT MODEL; DESIGN/METHODOLOGY/APPROACH; ELECTRICAL IMPEDANCE; ELECTRICAL TRANSPORT MECHANISMS; ELECTRON TRANSPORT; HIGH DENSITY; HYDROTHERMAL GROWTH; IMPEDANCE MEASUREMENT; IMPEDANCE SPECTROSCOPY; MONOETHANOLAMINE; P-TYPE SI; SEED SOLUTION; SEM IMAGE; SILICON SUBSTRATES; SPIN COATERS; SPINNING SPEED; ULTRASONIC BATH; XRD PATTERNS; ZINC ACETATE DIHYDRATE; ZINC NITRATES; ZNOX;

ACETONE; DOPING (ADDITIVES); ELECTRIC IMPEDANCE; ELECTRIC IMPEDANCE MEASUREMENT; ETHANOL; HYDRATES; MICROELECTRONICS; NANORODS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SOL-GEL PROCESS; SOL-GELS; TEMPERATURE; X RAY DIFFRACTION; ZINC COMPOUNDS; ZINC OXIDE;

ALUMINUM;

EID: 84864654673     PISSN: 13565362     EISSN: None     Source Type: Journal    
DOI: 10.1108/13565361211252872     Document Type: Article

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