Dynamics of charge carrier trapping in NO 2 sensors based on ZnO field-effect transistors

Sensors and Actuators, B: Chemical

Volumn 171-172, Issue , 2012, Pages 1172-1179

  Andringa, Anne Marije ^a,b   Vlietstra, Nynke ^a,b   Smits, Edsger C P ^c   Spijkman, Mark Jan ^a,b   Gomes, Henrique L ^d   Klootwijk, Johan H ^b   Blom, Paul W M ^a,c   De Leeuw, Dago M ^a,b  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c HOLST CENTRE   (Netherlands)

^d UNIVERSITY OF ALGARVE   (Portugal)

Author keywords

Activation energy; Charge carrier trapping; Field effect transistor; NO 2 sensors; Stretched exponential; Thermally stimulated current; Threshold voltage shift

Indexed keywords

ANALYTICAL DESCRIPTION; CHARACTERISTIC TEMPERATURE; CHARGE CARRIER TRAPPING; DE-TRAPPING; FUNCTIONAL DEPENDENCE; NITROGEN DIOXIDES; OPERATING TEMPERATURE; PRESSURE WINDOW; REAL TIME SENSORS; SENSOR RESPONSE; STRETCHED-EXPONENTIAL; TEMPORAL BEHAVIOR; THERMALLY ACTIVATED; THERMALLY STIMULATED CURRENT; THRESHOLD VOLTAGE SHIFTS; TIME DEPENDENCE; TRAP DEPTH; ZNO;

ACTIVATION ENERGY; CHARGE CARRIERS; CHARGE TRAPPING; DYNAMICS; FIELD EFFECT TRANSISTORS; OPTIMIZATION; SENSORS; THERMOLUMINESCENCE; THRESHOLD VOLTAGE; ZINC OXIDE;

NITROGEN OXIDES;

EID: 84864283968     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.06.062     Document Type: Article

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