Light output extraction enhancement in GaN-based green LEDs with periodic AZO subwavelength nanostructure arrays

IEEE Photonics Technology Letters

Volumn 24, Issue 16, 2012, Pages 1381-1383

  Joo, Dong Hyuk ^a   Lee, Hee Kwan ^a   Yu, Jae Su ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Aluminum doped zinc oxides (AZO); GaN based green light emitting diodes (LEDs); laser interference lithography; light extraction; subwavelength nanostructure arrays (SNAs)

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; AZO FILMS; ELECTRICAL CHARACTERISTIC; GREEN LEDS; INDIUM TIN OXIDE ELECTRODES; INGAN/GAN; LASER INTERFERENCE LITHOGRAPHY; LIGHT EXTRACTION; LIGHT OUTPUT; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; NANOSTRUCTURE ARRAYS; PATTERNED SAPPHIRE SUBSTRATE; SUB-WAVELENGTH;

ALUMINUM; DEGRADATION; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOSTRUCTURES; PHOTOLITHOGRAPHY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; TIN; TIN OXIDES; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84864262846     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2204869     Document Type: Article

References (12)

1. E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science, vol. 308, no. 5726, pp. 1274-1278, May 2005. (Pubitemid 40746117)
2. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, "Approaches for high internal quantum efficiency green InGaN lightemitting diodes with large overlap quantum wells," Opt. Express, vol. 19, no. S4, pp. 991-1007, Jul. 2011.
3. Y. J. Lee, H. C. Kuo, T. C. Lu, B. J. Su, and S. C. Wang, "Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates," J. Electrochem. Soc., vol. 153, no. 12, pp. 1106-1111, Oct. 2006.
4. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol. 84, no. 6, pp. 855-857, Feb. 2004.
5. S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, "Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN," Appl. Phys. Lett., vol. 98, no. 7, pp. 071102-1-071102-3, Feb. 2011.
6. J. Zhong, et al., "Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency," Appl. Phys. Lett., vol. 90, no. 20, pp. 203515-1-203515-3, May 2007.
7. C. B. Soh, et al., "Optimization of hydrothermal growth ZnO nanorods for enhancement of light extraction," J. Cryst. Growth, vol. 312, no. 12, pp. 1848-1854, May 2010.
8. T. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett., vol. 84, no. 4, pp. 466-468, Jan. 2004.
9. J. K. Kim, et al., "Light-extraction enhancement of GaInN light-emitting diodes by graded-index indium tin oxide anti-reflection contact," Adv. Mater., vol. 20, no. 4, pp. 801-804, Jan. 2008.
10. J. W. Leem, Y. M. Song, Y. T. Lee, and J. S. Yu, "Antireflective properties of AZO subwavelength gratings patterned by holographic lithography," Appl. Phys. B, vol. 99, no. 4, pp. 695-700, Jun. 2010.
11. E. Hecht, Optic, 4th ed. Reading, MA: Addison Wesley, 2002.
12. J. W. Leem, D. H. Joo, and J. S. Yu, "Biomimetic parabola-shaped AZO subwavelength grating structures for efficient antireflection of Si-based solar cells," Solar Energy Mater. Solar Cells, vol. 95, no. 8, pp. 2221-2227, Aug. 2011.