Challenges and opportunities for HfO X based resistive random access memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Chen, Y S ^a,c   Lee, H Y ^a   Chen, P S ^b   Tsai, C H ^a   Gu, P Y ^a   Wu, T Y ^a   Tsai, K H ^a   Sheu, S S ^a   Lin, W P ^a   Lin, C H ^a   Chiu, P F ^a   Chen, W S ^a   Chen, F T ^a   Lien, C ^c   Tsai, M J ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY OXIDES; ELECTRICAL PERFORMANCE; FUTURE CHALLENGES; MEMORY PROPERTIES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SWITCHING DEVICES;

ELECTRON DEVICES;

EID: 84863060613     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131649     Document Type: Conference Paper

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