Bulk heterojunction versus diffused bilayer: The role of device geometry in solution p-doped polymer-based solar cells

Journal of Physical Chemistry Letters

Volumn 3, Issue 14, 2012, Pages 1908-1915

  Loiudice, Anna ^a,b   Rizzo, Aurora ^b,c   Biasiucci, Mariano ^b,d   Gigli, Giuseppe ^a,b,c  

^a UNIVERSITY OF SALENTO   (Italy)

^b ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^c CNR   (Italy)

^d SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; BULK HETEROJUNCTION; BULK-HETEROJUNCTION DEVICES; DEVICE CONFIGURATIONS; DEVICE GEOMETRIES; DONOR AND ACCEPTOR; FILM CONDUCTIVITY; KELVIN PROBE FORCE MICROSCOPY; LIGHT INTENSITY; P-DOPING; P-TYPE DOPING; POLYMER SOLAR CELLS; POLYMER-BASED SOLAR CELLS; POTENTIAL BARRIERS; POWER CONVERSION EFFICIENCIES;

BLENDING; CONVERSION EFFICIENCY; INTERFACES (MATERIALS); PHOSPHORUS; SEMICONDUCTOR DOPING; SOLAR CELLS; TRANSPORT PROPERTIES;

HETEROJUNCTIONS;

EID: 84864051669     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz300754p     Document Type: Article

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