Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure

Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

  Maiorano, V ^a   Bramanti, A ^b   Carallo, S ^a   Cingolani, R ^c   Gigli, G ^a,d  

^a NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^b STMICROELECTRONICS   (Italy)

^c ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^d UNIVERSITY OF SALENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MEDIUM; AMBIPOLAR; DOPED TRANSPORT LAYERS; DOPING PROFILES; ELECTRICAL CHARACTERISTIC; FULL INTEGRATION; HIGH OUTPUT; LAYERED STRUCTURES; ORGANIC LIGHT-EMITTING FIELD-EFFECT TRANSISTORS; PLANAR COMPLEXES; TRANSISTOR CHANNELS;

DOPING (ADDITIVES); ELECTRON MULTIPLIERS; GATES (TRANSISTOR); LIGHT EMISSION; ORGANIC FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 77950502109     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3377911     Document Type: Article

References (13)

1. F. Cicoira and C. Santato, Adv. Funct. Mater. AFMDC6 1616-301X 17, 3421 (2007). 10.1002/adfm.200700174 (Pubitemid 350221692)
2. C. Rost, S. Karg, W. Riess, M. A. Loi, M. Murgia, and M. Muccini, Appl. Phys. Lett. APPLAB 0003-6951 85, 1613 (2004). 10.1063/1.1785290
3. F. Dinelli, R. Capelli, M. A. Loi, M. Murgia, M. Muccini, A. Facchetti, and T. J. Marks, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 18, 1416 (2006). 10.1002/adma.200502164 (Pubitemid 43893454)
4. N. Suganuma, N. Shimoji, Y. Oku, S. Okuyama, and K. Matsushige, Org. Electron. OERLAU 1566-1199 9, 834 (2008). 10.1016/j.orgel.2008.06.001
5. F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini, and D. M. de Leeuw, Phys. Rev. Lett. PRLTAO 0031-9007 92, 116802 (2004). 10.1103/PhysRevLett. 92.116802
6. J. Zaumseil, R. H. Friend, and H. Sirringhaus, Nature Mater. NMAACR 1476-1122 5, 69 (2006). 10.1038/nmat1537 (Pubitemid 43049391)
7. M. Muccini, Nature Mater. NMAACR 1476-1122 5, 605 (2006). 10.1038/nmat1699 (Pubitemid 44157676)
8. P. Wellmann, M. Hofmann, O. Zeika, A. Werner, J. Birnstock, R. Meerheim, G. He, K. Walzer, M. Pfeiffer, and K. Leo, J. Soc. Inf. Disp. JSIDE8 1071-0922 13, 393 (2005) 10.1889/1.1927730; B. Maennig, M. Pfeiffer, A. Nollau, X. Zhou, K. Leo, and P. Simon, Phys. Rev. B PRBMDO 0163-1829 64, 195208 (2001) 10.1103/PhysRevB.64.195208; G. He, O. Schneider, D. Qin, X. Zhou, M. Pfeiffer, and K. Leo, J. Appl. Phys. JAPIAU 0021-8979 95, 5773 (2004) 10.1063/1.1702143; T. W. Canzler, U. Denker, O. Fadhel, Q. Huang, C. Rothe, and A. Werner, Proc. SPIE PSISDG 0277-786X 7054, 70540O (2008) 10.1117/12.792734; B. W. D'Andrade, R. S. Forrest, and A. B. Chwang, Appl. Phys. Lett. APPLAB 0003-6951 83, 3858 (2003). 10.1063/1.1624473
9. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
10. A. Dodabalapur, H. E. Katz, L. Torsi, and R. C. Haddon, Science SCIEAS 0036-8075 269, 1560 (1995). 10.1126/science.269.5230.1560
11. S. Verlaak, D. Cheyns, M. Debucquoy, V. Arkhipov, and P. Heremans, Appl. Phys. Lett. APPLAB 0003-6951 85, 2405 (2004). 10.1063/1.1792372
12. K. Walzer, B. Maennig, M. Pfeiffer, and K. Leo, Chem. Rev. (Washington, D.C.) CHREAY 0009-2665 107, 1233 (2007). 10.1021/cr050156n (Pubitemid 46736538)
13. I. N. Hulea, S. Fratini, H. Xie, C. L. Mulder, N. N. Iossad, G. Rastelli, S. Ciuchi, and A. F. Morpurgo, Nature Mater. NMAACR 1476-1122 5, 982 (2006). 10.1038/nmat1774 (Pubitemid 44847496)