Processing dependence of structural and physical properties of Mg 2Ge thin films prepared by pulsed laser deposition

Thin Solid Films

Volumn 520, Issue 19, 2012, Pages 6226-6229

  Chuang, L ^a   Wang, D Y ^a   Tan, T T ^a   Assadi, M H N ^a   Li, S ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Bandgap; Magnesium germanide; Pulsed laser deposition; Substrate temperature; Surface morphology; X ray diffraction

Indexed keywords

BAND GAP ENERGY; BURSTEIN-MOSS SHIFT; CARRIER-CONCENTRATION DEPENDENCE; DEPOSITION TEMPERATURES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTIVITY; GE THIN FILMS; GERMANIDES; HIGHEST TEMPERATURE; MGO; OPTICAL ABSORPTION EDGE; POLYCRYSTALLINE; PULSED-LASER DEPOSITION TECHNIQUE; ROOM TEMPERATURE; STRAIN VALUES; STRUCTURAL AND PHYSICAL PROPERTIES; SUBSTRATE TEMPERATURE; VARIOUS SUBSTRATES;

ELECTRIC CONDUCTIVITY; ENERGY GAP; GERMANIUM; MAGNESIUM; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; SUBSTRATES; SURFACE MORPHOLOGY; THIN FILMS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84863579355     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.05.071     Document Type: Article

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