Franz-Keldysh electro-absorption modulation in germanium-tin alloys

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Soref, R A ^a   Sun, G ^a   Cheng, H H ^b  

^a UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

B-PARAMETER; CHANNEL WAVEGUIDE; CRYSTALLINE GE; ELECTRO-ABSORPTION; FIGURE OF MERITS; NONRESONANT; ON/OFF CONTRAST RATIO; PHOTON ENERGY; ZERO FIELDS;

CURVE FITTING; ELECTRIC FIELDS; ELECTROMAGNETIC WAVE ABSORPTION; GERMANIUM; LIGHT MODULATORS; TIN ALLOYS;

TIN;

EID: 84863514075     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4730404     Document Type: Article

References (18)

1. G. Sun, R. A. Soref, and H. H. Cheng, Design of Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode., Opt. Express 18, 19957-19965 (2010). 10.1364/OE.18.019957
2. P. Moontragon, N. Vukmirovic, Z. Ikonic and P. Harrison, SnGe asymmetric quantum well electroabsorption modulators for long-wave silicon photonics., IEEE J. Sel. Top. Quantum Electron. 16, 100-105 (2010). 10.1109/JSTQE.2009.2026691
3. G.-E. Chang and C.-O. Chang, Design of strain-free GeSn/SiGeSn quantum-well electroabsorption modulators at 1550 nm wavelength., in paper P1.8, IEEE 7th International Conference on Group IV Photonics, Beijing, China, 2010.
4. S. Jongthammanurak, J. Liu, K. Wada, D. C. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, Large electro-optic effect in tensile strained Ge-on-Si films., Appl. Phys. Lett. 89, 161115 (2006). 10.1063/1.2363948
5. J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, Waveguide-integrated ultralow-energy GeSi electro-absorption modulators., Nat. Photonics 2, 433-437 (2008). 10.1038/nphoton.2008.99
6. J. Liu and J. Michel, High performance Ge devices for electronic-photonic integrated circuits., Electrochem. Soc. Trans. 16, 575-582 (2008).
7. N. N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C. C. Kung, W. Qian, J. Fong, R. Shafiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, 30 GHz Ge electro-absorption modulator integrated with 3 m silicon-on-insulator waveguide., Opt. Express 19, 7062-7067 (2011). 10.1364/OE.19.007062
8. A. E. J. Lim, T.-Y. Liow, F. Qing, N. Duan, L. Ding, M. Yu, G.-Q. Lo, and D.-L. Kwong, Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector., Opt. Express 19, 5040-5046 (2011). 10.1364/OE.19.005040
9. J. Liu, D. Pan, S. Jongthammanurak, K. Wada, L. C. Kimerling, and J. Michel, Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on an SOI platform., Opt. Express 15, 623-628 (2007). 10.1364/OE.15.000623
10. 1-x/Ge(001) heterostructures., Appl. Phys. Lett. 77, 3418 (2000). 10.1063/1.1328097
11. x alloys at 4K., J. Superficies y Vacio 21 (2), 9-11 (2008).
12. E. D. Palik, Germanium., in Handbook of Optical Constants of Solids, edited by, R. F. Potter, (Academic, 1985), Vol. 1, p. 465.
13. J. Kouvetakis, M. Bauer, J. Menendez, C. W. Hu, I. S. T. Tsong, and J. Tolle, GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon, U.S. patent 7,589,003 (15 September 2009).
14. V. R. D'Costa, Y. Fang, J. Mathews, R. Roucka, J. Tolle, J. Menendez, and J. Kouvetakis, Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunications bands., Semicond. Sci. Technol. 24, 115006 (2009). 10.1088/0268-1242/24/11/115006
15. B. R. Bennett and R. A. Soref, Analysis of Franz-Keldysh electro-optic modulation in InP, GaAs, GaSb, InAs and InSb., Proc. SPIE 836, 158-168 (1987).
16. B. van Zeghbroeck, Principles of Semiconductor Devices: Course Text (University of Colorado, 1996).
17. See http://www.ioffe.ru/SVA/NSM/Semicond/Ge/bandstr.html#Basic for Ioffe website.
18. E. Edwards, R. M. Audet, E. Fei, G. Shambat, R. K. Schaevitz, Y. Rong, S. A. Claussen, T. I. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, Ge quantum well resonant modulators., in IEEE 8th International Group IV Photonics Conference, London, 16 September 2011, paper P1.8.