Direct probing of selective electron and hole accumulation processes along the channel of an ambipolar double-layer field-effect transistor by optical modulation spectroscopy

Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

  Zhang, Le ^a   Taguchi, Dai ^a   Manaka, Takaaki ^a   Iwamoto, Mitsumasa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; CARRIER ACCUMULATION; CHANNEL REGION; DOUBLE LAYERS; HOLE ACCUMULATION; HOLE AND ELECTRON ACCUMULATION; INJECTED CARRIERS; IV CHARACTERISTICS; PENTACENE LAYERS; PENTACENES; SINGLE LAYER;

MOLECULAR SPECTROSCOPY; ORGANIC FIELD EFFECT TRANSISTORS;

LIGHT MODULATION;

EID: 84863361368     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3692581     Document Type: Article

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