High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

Applied Physics Letters

Volumn 100, Issue 25, 2012, Pages

  Hu, Binhui ^a   Kott, Tomasz M ^a   McFarland, Robert N ^a,b   Kane, B E ^a  

^a LABORATORY FOR PHYSICAL SCIENCES   (United States)

^b I SW   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGES; HIGH MOBILITY; HOLE DENSITIES; HOLE SYSTEMS; HYDROGEN-TERMINATED SI(111); HYDROGEN-TERMINATED SILICON; NEGATIVE GATE VOLTAGES; SHUBNIKOV-DE HAAS OSCILLATIONS; SPIN-ORBIT EFFECTS; TWO-DIMENSIONAL HOLE SYSTEM (2DHS); VACUUM CAVITY; ZERO-FIELD SPIN SPLITTING;

QUANTUM HALL EFFECT;

HYDROGEN;

EID: 84863323550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729584     Document Type: Article

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