Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

Applied Physics Letters

Volumn 100, Issue 26, 2012, Pages

  Mikheev, E ^a   Stolichnov, I ^a   Huang, Z ^a   Rushforth, A W ^b   Haigh, J A ^b   Campion, R P ^b   Edmonds, K W ^b   Gallagher, B L ^b   Setter, N ^a  

^a EPFL   (Switzerland)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC MAGNETORESISTANCE; CRYSTALLINE COMPONENTS; DILUTE MAGNETIC SEMICONDUCTORS; FERROELECTRIC GATE; FERROELECTRIC LAYERS; INTEGRATED POLYMERS; NON-VOLATILE; SWITCHABLE POLARIZATION;

ELECTRIC FIELDS; ELECTRIC RESISTANCE; FERROELECTRIC DEVICES; FERROELECTRICITY; GALLIUM; MANGANESE;

ANISOTROPY;

EID: 84863305452     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4731245     Document Type: Article

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