Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Rushforth, A W ^a   Wang, M ^a   Farley, N R S ^a   Campion, R P ^a   Edmonds, K W ^a   Staddon, C R ^a   Foxon, C T ^a   Gallagher, B L ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CONCENTRATION (PROCESS); CRYSTAL GROWTH; FERROMAGNETIC MATERIALS; GALLIUM; GALLIUM ALLOYS; MAGNETIC ANISOTROPY; MAGNETIC MATERIALS; MAGNETISM; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHOSPHORUS; SEMICONDUCTOR QUANTUM WIRES; SWITCHING; TENSILE STRAIN;

COERCIVE FIELDS; ELECTRICAL; EXPERIMENTAL INVESTIGATIONS; GAAS SUBSTRATES; MAGNETIC; MAGNETIC EASY AXES; METALLIC BEHAVIORS; METALLIC FERROMAGNETIC MATERIALS; MICROMAGNETIC; MOLECULAR-BEAM EPITAXIES; PERPENDICULAR MAGNETIC ANISOTROPIES; PHOSPHOROUS CONCENTRATIONS; X-RAY DIFFRACTIONS;

MAGNETIC PROPERTIES;

EID: 54049142469     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2991355     Document Type: Article

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