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Applied Physics Letters

Volumn 100, Issue 26, 2012, Pages

Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters

(6) Tatebayashi, J a Ota, Y a Ishida, S a,b Nishioka, M a,b Iwamoto, S a,b Arakawa, Y a,b

a UNIVERSITY OF TOKYO (Japan)

b INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PROCESS; EXCITONIC EMISSION; GAAS; HIGH QUALITY; INAS; INAS/GAAS; INAS/GAAS QUANTUM DOTS; PHOTOLUMINESCENCE CHARACTERIZATION; PHOTON ANTIBUNCHING; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SINGLE PHOTON EMISSION; SINGLE PHOTON EMITTERS;

EXCITONS; GALLIUM ARSENIDE; INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84863300326 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4731208 Document Type: Article

Times cited : (45)

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