Low temperature atomic layer deposition of Ru thin films with enhanced nucleation using various Ru(o) metallorganic precursors and molecular O 2

ECS Transactions

Volumn 41, Issue 2, 2011, Pages 19-23

  Kim, Soo Hyun ^a  

^a Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMS; CRYSTALLIZATION; MOLECULAR OXYGEN; NUCLEATION; ORGANOMETALLICS; OXYGEN SUPPLY; RUTHENIUM COMPOUNDS; SILICA; SUBSTRATES; TEMPERATURE; THIN FILMS;

CU ELECTROPLATING; CYCLOHEXADIENES; CYCLOPENTADIENYLS; INCUBATION TIME; LOW TEMPERATURES; MAXIMUM DENSITY; SUBSTRATE TEMPERATURE; TEMPERATURE WINDOW;

ATOMIC LAYER DEPOSITION;

EID: 84863179465     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633650     Document Type: Conference Paper

References (7)

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4. T. Aaltonen, M. Ritala, K. Arstila, J. Keinonen, and M. Leskelä, Chem. Vap. Dep., 10, 217 (2004).
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7. S.-H. Choi, T. Cheon, S.-H. Kim, D.-H. Kang, K.-S. Park, and S. Kim, J. Electrochem. Soc., 158, D351 (2011).