A monolithic AlGaN/GaN HEMT VCO using BST film varactor

2011 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2011

Volumn , Issue , 2011, Pages 197-200

  Kong, Cen ^a   Li, Hui ^a   Jiang, Shuwen ^b   Zhou, Jianjun ^a   Chen, Xiaojian ^a   Chen, Chen ^a  

^a NANJING ELECTRONIC DEVICES INSTITUTE   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

AlGaN GaN HEMT; BST Varactor; MMIC Process; Monolithic VCO

Indexed keywords

ALGAN/GAN HEMTS; BST FILM; BST THIN FILMS; CENTRAL FREQUENCY; FABRICATION PROCESS; FULLY COMPATIBLE; INTEGRATED PROCESS; OUTPUT POWER; RF-MAGNETRON SPUTTERING; TUNABLE FREQUENCY; VOLTAGE CONTROLLED OSCILLATOR;

CIRCUIT OSCILLATIONS; GALLIUM NITRIDE; INTEGRATION; MAGNETRON SPUTTERING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; VARIABLE FREQUENCY OSCILLATORS;

VARACTORS;

EID: 84863160875     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIT.2011.6141794     Document Type: Conference Paper

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