Annealing effect on the electronic structure and magnetic properties of Mn-doped ZnO films

Semiconductor Science and Technology

Volumn 27, Issue 3, 2012, Pages

  Jin, J ^a,b   Zhang, X Y ^b   Zhou, Y X ^b   Chang, G S ^c  

^a SHANGHAI UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

^c UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EFFECTS; AS-GROWN FILMS; DIFFUSION MECHANISMS; FERROMAGNETIC FILMS; LOCAL ELECTRONIC STRUCTURES; MN ATOMS; MN IONS; MN-DOPED ZNO; SECONDARY PHASIS; SOFT X-RAY; ZNO;

CRITICAL CURRENTS; ELECTRONIC STRUCTURE; EPITAXIAL FILMS; IONS; MAGNETIC PROPERTIES; MANGANESE OXIDE; X RAY SPECTROSCOPY; ZINC; ZINC OXIDE;

MANGANESE;

EID: 84863136715     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/3/035012     Document Type: Article

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