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Applied Physics Letters

Volumn 100, Issue 4, 2012, Pages

Recoverable electrical transition in a single graphene sheet for application in nonvolatile memories

(4) Wu, Chaoxing a Li, Fushan a Zhang, Yongai a Guo, Tailiang a

a FUZHOU UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; CURRENT-VOLTAGE MEASUREMENTS; DATA STORAGE; ELECTRICAL TRANSITION; GRAPHENE SHEETS; INDIUM TIN OXIDE ELECTRODES; LOCAL OXIDATION; MEMORY DEVICE; NON-VOLATILE MEMORIES; ON/OFF RATIO; PLANAR DEVICES; RESISTIVE SWITCHING MEMORIES; RETENTION ABILITY; SWITCHING MECHANISM; VOLTAGE BIAS;

ELECTRIC PROPERTIES; TIN;

GRAPHENE;

EID: 84863071975 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3680093 Document Type: Article

Times cited : (29)

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