Enhanced light extraction of GaN-based green light-emitting diodes with GaOOH rods

IEEE Photonics Technology Letters

Volumn 24, Issue 4, 2012, Pages 285-287

  Lee, Hee Kwan ^a   Kim, Myung Sub ^a   Yu, Jae Su ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Drop coating process; GaN based green light emitting diodes (LEDs); GaOOH rods; light extraction

Indexed keywords

AVERAGE LENGTH; DROP COATINGS; ELECTRICAL CHARACTERISTIC; GALLIUM OXIDES; GAOOH RODS; INDIUM TIN OXIDE ELECTRODES; INGAN/GAN; LATERAL DIMENSION; LIGHT EXTRACTION; LIGHT OUTPUT; LIGHT-EXTRACTION EFFICIENCY; NITRATE SOLUTIONS; PATTERNED SAPPHIRE SUBSTRATE; ROD STRUCTURE;

COATINGS; DIODES; DROPS; ELECTRODES; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM COMPOUNDS; LIGHT EMISSION; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; TIN; TIN OXIDES;

LIGHT EMITTING DIODES;

EID: 84863030811     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2177455     Document Type: Article

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